CHARGE-STATE-DEPENDENT DIFFUSION AND CARRIER-EMISSION-LIMITED DRIFT OF IRON IN SILICON

被引：36

作者：

HEISER, T ^{[1
]}

MESLI, A ^{[1
]}

机构：

[1] UNIV STRASBOURG 1,DEPT PHYS,F-67070 STRASBOURG,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.68.978

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The behavior of iron in silicon during low-temperature annealing was studied. The influence of electric fields on the underlying defect reactions is detailed. The depth profiles reveal Fe(i) outdiffusion and no precipitation in the bulk up to 470 K. In the presence of electric fields, the kinetics differ considerably and can be understood in terms of carrier-emission-limited iron drift. Consequences of this mechanism are discussed. The outdiffusion and drift data indicate a charge-state-dependent diffusion mechanism, in contrast to the generally accepted lack of any charge-state effect.

引用

页码：978 / 981

页数：4