Raman spectroscopy of graphene under ultrafast laser excitation

被引：84

作者：

Ferrante, C. ^{[1
,2
]}

Virga, A. ^{[1
,2
]}

Benfatto, L. ^{[3
]}

Martinati, M. ^{[1
]}

De Fazio, D. ^{[4
]}

Sassi, U. ^{[4
]}

Fasolato, C. ^{[1
]}

Ott, A. K. ^{[4
]}

Postorino, P. ^{[1
]}

Yoon, D. ^{[4
]}

Cerullo, G. ^{[5
]}

Mauri, F. ^{[1
,2
]}

Ferrari, A. C. ^{[4
]}

Scopigno, T. ^{[1
,2
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[2] Ist Italiano Tecnol, Ctr Life Nano Sci Sapienza, I-00161 Rome, Italy

[3] UoS Sapienza, CNR, Inst Complex Syst, I-00185 Rome, Italy

[4] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[5] Politecn Milan, IFN CNR, Dipartimento Fis, Pzza L Vinci 32, I-20133 Milan, Italy

来源：

NATURE COMMUNICATIONS | 2018年 / 9卷

基金：

英国工程与自然科学研究理事会;

关键词：

MODE; SCATTERING; EMISSION; DYNAMICS; FILMS;

D O I：

10.1038/s41467-017-02508-x

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions; however, their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3 ps pulses, which trade off between impulsive stimulation and spectral resolution. We localize energy into hot carriers, generating nonequilibrium temperatures in the similar to 1700-3100 K range, far exceeding that of the phonon bath, while simultaneously detecting the Raman response. The linewidths of both G and 2D peaks show an increase as function of the electronic temperature. We explain this as a result of the Dirac cones' broadening and electron-phonon scattering in the highly excited transient regime, important for the emerging field of graphene-based photonics and optoelectronics.

引用

页数：8

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