Dependence of phonon linewidths in semiconductors on temperature and isotopic composition

被引：8

作者：

Debernardi, A ^{[1
]}

Cardona, M ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1998年 / 20卷 / 7-8期

关键词：

D O I：

10.1007/BF03185495

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work we present calculations of the Raman linewidth in 3C-SiC with different isotopic compositions which present non-trivial trends. Our results are discussed for both longitudinal and transverse modes. The temperature dependence of the linewidth of natural SiC is computed and compared with available experimental data.

引用

页码：923 / 930

页数：8

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