THE EFFECT OF SURFACE-STATES AND BAND BENDING CHANGE ON REFLECTIVITY OF CLEAVED GAAS(110) AND GAP(110)

被引:33
作者
CICCACCI, F [1 ]
SELCI, S [1 ]
CHIAROTTI, G [1 ]
CHIARADIA, P [1 ]
CRICENTI, A [1 ]
机构
[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY
关键词
D O I
10.1016/0039-6028(86)90832-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:28 / 34
页数:7
相关论文
共 25 条
[1]   REFLECTION ELECTRON-ENERGY-LOSS INVESTIGATION OF THE H-GAAS(110) SURFACE [J].
ANTONANGELI, F ;
CALANDRA, C ;
COLAVITA, E ;
NANNARONE, S ;
RINALDI, C ;
SORBA, L .
PHYSICAL REVIEW B, 1984, 29 (01) :8-15
[2]  
AUST HU, 1985, 5TH P GEN C COND MAT
[3]   OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110) [J].
BARTELS, F ;
SURKAMP, L ;
CLEMENS, HJ ;
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :756-762
[4]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[6]   OPTICAL-DETECTION OF SURFACE-STATES IN GAAS(110) AND GAP(110) [J].
CHIARADIA, P ;
CHIAROTTI, G ;
CICCACCI, F ;
MEMEO, R ;
NANNARONE, S ;
SASSAROLI, P ;
SELCI, S .
SURFACE SCIENCE, 1980, 99 (01) :70-75
[7]   OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].
CHIAROTTI, G ;
NANNARONE, S ;
PASTORE, R ;
CHIARADIA, P .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+
[8]  
CICCACCI F, UNPUB
[9]   INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) [J].
DOSE, V ;
GOSSMANN, HJ ;
STRAUB, D .
SURFACE SCIENCE, 1982, 117 (1-3) :387-393
[10]  
HIMPSEL FJ, 1984, 17TH P INT C PHYS SE