INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110)

被引:36
作者
DOSE, V
GOSSMANN, HJ
STRAUB, D
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D O I
10.1016/0039-6028(82)90522-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:387 / 393
页数:7
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共 17 条
  • [1] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS
    CHADI, DJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 631 - 636
  • [2] CHADI DJ, COMMUNICATION
  • [3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
    CHELIKOWSKY, JR
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
  • [4] ISOCHROMAT SPECTROSCOPY USING SXAPS EQUIPMENT
    CONRAD, M
    DOSE, V
    FAUSTER, T
    SCHEIDT, H
    [J]. APPLIED PHYSICS, 1979, 20 (01): : 37 - 40
  • [5] VUV ISOCHROMAT SPECTROSCOPY
    DOSE, V
    [J]. APPLIED PHYSICS, 1977, 14 (01): : 117 - 118
  • [6] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
    EASTMAN, DE
    FREEOUF, JL
    [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
  • [7] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
  • [8] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS
    KAHN, A
    CISNEROS, G
    BONN, M
    MARK, P
    DUKE, CB
    [J]. SURFACE SCIENCE, 1978, 71 (02) : 387 - 396
  • [9] KUNZ C, 1971, NBS SPEC PUBL, V323, P275
  • [10] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS
    LOUIE, SG
    SCHLUTER, M
    CHELIKOWSKY, JR
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1654 - 1663