Fabrication of single crystalline SiC layer on high temperature glass

被引：18

作者：

Tong, QY

Lee, TH

Werner, P

Gosele, U

Bergmann, RB

Werner, JH

机构：

[1] DUKE UNIV,WATER BONDING LAB,DURHAM,NC 27708

[2] MAX PLANCK INST SOLID STATE RES,D-70569 STUTTGART,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期

关键词：

D O I：

10.1149/1.1837628

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H-2 at 160 keV with 5.0 x 10(16) ion cm(-2) onto a high temperature (800 degrees C) glass by anodic bonding and subsequent layer splitting at 725 degrees C. The relatively rough SiC surface (rms 20 Angstrom) prevents direct bonding but appears to be no obstacle for anodic bonding with glass. The activation energy of formation of optically detectable surface blisters caused by hydrogen filled microcracks in SiC samples served as a guideline to find a process window for the layer transfer approach.

引用

页码：L111 / L113

页数：3

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