InAs-doped silica films for saturable absorber applications

被引：12

作者：

Bilinsky, IP ^{[1
]}

Fujimoto, JG

Walpole, JN

Missaggia, LJ

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA

[2] MIT, Lincoln Lab, Lexington, MA 02420 USA

[3] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs-doped thin silica films having saturable absorption properties were fabricated using rf sputtering. The films contain semiconductor nanoparticles preserving the zincblende crystal structure of bulk InAs. We have investigated the linear and nonlinear optical as well as structural properties of the films. Rapid thermal annealing in nitrogen was successfully used to tailor the optical absorption saturation dynamics. The films having saturable absorber properties were applied to Kerr lens mode locking initiation in a Ti:Al2O3 laser resulting in self-starting mode locking operation with pulses as short as 25 fs. (C) 1999 American Institute of Physics. [S0003-6951(99)00917-1].

引用

页码：2411 / 2413

页数：3

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