Fabrication of an electrostatic track-following micro actuator for hard disk drives using SOI wafer

被引:62
作者
Kim, BH
Chun, KJ
机构
[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
关键词
D O I
10.1088/0960-1317/11/1/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents track-following control using an electrostatic microactuator for super-high density hard disk drives (HDDs). The electrostatic microactuator, a high aspect ratio track-following microactuator (TFMA) which is capable of driving 0.3 mug magnetic head for HDDs, is designed and fabricated by a microelectromechanical systems process. It was fabricated on a silicon on insulator wafer with a 20 mum thick active silicon layer and a 2 mum thick thermally grown silicon dioxide layer; a piggyback electrostatic principle was used for driving the TFMA. The first vibration mode frequency of the TFMA was 18.5 kHz, which is enough for a recording density of higher than 10 Gb in(-2). Its displacement was 1.4 mum when a 15 V dc bias plus a 15 V ac sinusoidal driving input was applied and its electrostatic force was 50.4 muN when the input voltage was 30.7 V. A track-following feedback controller is designed using a feedback nonlinear compensator, which is derived from the feedforward nonlinear compensator. The fabricated actuator shows 7.51 dB of gain margin and 50.98 degrees of phase margin for a 2.21 kHz servo bandwidth.
引用
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页码:1 / 6
页数:6
相关论文
共 34 条
[1]  
ABE T, 1990, SOLID STATE TECHNOL, V33, P39
[2]   SOI: Materials to systems [J].
AubertonHerve, AJ .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :3-10
[3]   Silicon dioxide sacrificial layer etching in surface micromachining [J].
Buhler, J ;
Steiner, FP ;
Baltes, H .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1997, 7 (01) :R1-R13
[4]   Electrostatic aluminum micromirrors using double-pass metallization [J].
Buhler, J ;
Funk, J ;
Korvink, JG ;
Steiner, FP ;
Sarro, PM ;
Baltes, H .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1997, 6 (02) :126-135
[5]   SIMOX (SEPARATION BY ION-IMPLANTATION OF OXYGEN) - A TECHNOLOGY FOR HIGH-TEMPERATURE SILICON SENSORS [J].
DIEM, B ;
TRUCHE, R ;
VIOLLETBOSSON, S ;
DELAPIERRE, G .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 23 (1-3) :1003-1006
[6]   SOI SIMOX - FROM BULK TO SURFACE MICROMACHINING, A NEW-AGE FOR SILICON SENSORS AND ACTUATORS [J].
DIEM, B ;
REY, P ;
RENARD, S ;
BOSSON, SV ;
BONO, H ;
MICHEL, F ;
DELAYE, MT ;
DELAPIERRE, G .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 46 (1-3) :8-16
[7]  
Fan L.-S., 1993, Proceedings. IEEE. Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.93CH3265-6), P179, DOI 10.1109/MEMSYS.1993.296926
[8]  
FAN LS, 1995, IEEE T IND ELECTRON, V42, P222
[9]  
Gennissen PTJ, 1997, TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P225, DOI 10.1109/SENSOR.1997.613624
[10]   Problems of sacrificial etching in the presence of aluminium interconnect [J].
Goosen, JFL ;
vanDrieenhuizen, BP ;
French, PJ ;
Wolffenbuttel, RF .
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 62 (1-3) :692-697