SIMOX (SEPARATION BY ION-IMPLANTATION OF OXYGEN) - A TECHNOLOGY FOR HIGH-TEMPERATURE SILICON SENSORS

被引：5

作者：

DIEM, B

TRUCHE, R

VIOLLETBOSSON, S

DELAPIERRE, G

机构：

[1] LETI, a Division of Commissariat d I'Energie Atomique, CENG, F-38041 Grenoble Cédex

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87077-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon pressure sensor using a new silicon-on-insulator 'SIMOX' technology has been developed. The fabricated devices exhibit a wide temperature range thanks to the theoretical 1/T behaviour of the sensitivity up to 400 °C. The reason for this is a perfect insulation between the resistors and from the substrate achieved by an SiO2 buried layer. This paper describes a micro-machined prototype SIMOX pressure sensor with a sensitivity of 40 mV/V, linearity and hysteresis better than 0.2% and good stability. © 1990.

引用

页码：1003 / 1006

页数：4

共 6 条

[1]

BAUMGART H, 1988, MAR EUR SOI WORKSH M

[2]

BRUEL M, 1988, MAR EUR SOI WORKSH M

[3] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J].