Inductively coupled plasma deposited silicon oxycarbide interlayers

被引：7

作者：

Tsai, KC ^{[1
]}

Shieh, JM ^{[1
]}

Dai, BT ^{[1
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2003年 / 6卷 / 10期

关键词：

D O I：

10.1149/1.1601371

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Low-permittivity materials of trimethylsilane-based carbon-doped oxide (SiOC) for interconnect interlayers were synthesized by inductively coupled plasma (ICP) methods. Methyl groups and Si-O-Si cage structures in ICP SiOC films were explored as two dominant factors in determining the electrical and material characteristics of such films. The high ionization efficiency from ICP, resulting in SiOC films that contain low hydrogen (low defect sites) but high oxygen concentrations (enhanced porous densities), yields such films with a high breakdown field of 6.8 MV/cm, a low leakage current below 1.0 x 10(-10) A/cm(2) (at 1.0 MV/cm), and a dielectric constant below 2.9. (C) 2003 The Electrochemical Society.

引用

页码：F31 / F33

页数：3

共 15 条

[1]

Bao TI, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P583, DOI 10.1109/IEDM.2002.1175908

[2]

FAYOLLE M, P 2002 INT INT TECHN, P39

[3] Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane [J].