Transport mechanisms in hydrogenated microcrystalline silicon

被引：23

作者：

Brenot, R ^{[1
]}

Vanderhaghen, R

Drévillon, B

Cabarrocas, PRI

Rogel, R

Mohammed-Brahim, T

机构：

[1] Ecole Polytech, Lab Phys Interfaces & Couches Minces, UMR 7647, CNRS, F-91128 Palaiseau, France

[2] Univ Rennes 1, Lab Microelect & Visualisat, F-35042 Rennes, France

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

microcrystalline silicon; transport; grain boundaries;

D O I：

10.1016/S0040-6090(00)01791-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport properties of microcrystalline (muc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hail measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in muc-Si/H can be neglected. Transport in muc-Si/H is consequently mainly limited by defects inside the crystallites. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 56

页数：4

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