Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth

被引：28

作者：

Brenot, R ^{[1
]}

Vanderhaghen, R ^{[1
]}

Drévillon, B ^{[1
]}

Cabarrocas, PRI ^{[1
]}

机构：

[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method which allows real-time microwave mobility measurements in thin-film semiconductors is described. Carriers mobility is determined during growth by combining two diagnostics: time-resolved microwave conductivity (TRMC) and spectroscopic ellipsometry (SE). TRMC provides the product of the number of free carriers, generated by a laser pulse, by their microwave mobility. The number of photogenerated carriers is calculated from real-time SE measurements. Therefore, the mobility of excess carriers in the growing layer can be deduced from TRMC measurements. In order to illustrate this technique, a TRMC setup has been implemented in situ together with real-time SE to analyze the growth of microcrystalline silicon (mu Si) by radio frequency glow discharge. An increase of the average carrier mobility as a function of the film thickness is observed, which is compared with the increase of the crystalline fraction evidenced by SE. (C) 1999 American Institute of Physics. [S0003-6951(99)01501-6].

引用

页码：58 / 60

页数：3

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