SUBSTRATE SELECTIVITY IN THE FORMATION OF MICROCRYSTALLINE SILICON - MECHANISMS AND TECHNOLOGICAL CONSEQUENCES

被引：113

作者：

CABARROCAS, PRI ^{[1
]}

LAYADI, N ^{[1
]}

HEITZ, T ^{[1
]}

DREVILLON, B ^{[1
]}

SOLOMON, I ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,CNRS,URA 1254,F-91128 PALAISEAU,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.113803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3609 / 3611

页数：3

共 14 条

[1]

BLAYO N, 1990, APPL PHYS LETT, V57, P51

[2] INSITU SPECTROELLIPSOMETRIC STUDY OF THE NUCLEATION AND GROWTH OF AMORPHOUS-SILICON [J].

CANILLAS, A ;

BERTRAN, E ;

ANDUJAR, JL ;

DREVILLON, B .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2752-2759

[3] INSITU ELLIPSOMETRY OF THIN-FILM DEPOSITION - IMPLICATIONS FOR AMORPHOUS AND MICROCRYSTALLINE SI GROWTH [J].

COLLINS, RW ;

YANG, BY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05) :1155-1164

[4] INSITU INVESTIGATION OF THE OPTOELECTRONIC PROPERTIES OF TRANSPARENT CONDUCTING OXIDE AMORPHOUS SILICON INTERFACES [J].

DREVILLON, B ;

KUMAR, S ;

CABARROCAS, PRI ;

SIEFERT, JM .

APPLIED PHYSICS LETTERS, 1989, 54 (21) :2088-2090

[5]

HEINTZE M, 1993, J NONCRYST SOLIDS, V164, P985

[6]

LAYADI N, IN PRESS PHYS REV B

[7]

LAYADI N, 1994, 12TH EUR PHOT SOL EN, P1257

[8] ROLE OF HYDROGEN-ATOMS IN THE FORMATION PROCESS OF HYDROGENATED MICROCRYSTALLINE SILICON [J].

NOMOTO, K ;

URANO, Y ;

GUIZOT, JL ;

GANGULY, G ;

MATSUDA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1372-L1375

[9]

PARSONS GN, 1993, MAT RES S C, V283, P495

[10]

SHIBATA N, 1987, MATER RES SOC S P, V95, P225

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