In situ correlation between the optical and electrical properties of thin intrinsic and n-type microcrystalline silicon films

被引:59
作者
Hamma, S
Cabarrocas, PRI
机构
[1] Lab. Phys. Interfaces Couches Minces, CNRS, UPR 258, Ecole Polytechnique
关键词
D O I
10.1063/1.365325
中图分类号
O59 [应用物理学];
学科分类号
摘要
Intrinsic and n-type microcrystalline silicon thin films were deposited on intrinsic hydrogenated amorphous silicon by the layer-by-layer technique. The growth of the samples has been analysed in situ by kinetic ellipsometry, spectroscopic ellipsometry, and dark conductivity measurements. This in situ analysis has shown that the process of deposition can be divided into four phases: incubation, nucleation, growth, and steady state. Moreover we have found striking differences between the growth of undoped and n-type samples in both the kinetics of the formation of crystallites and the zone where the nucleation of crystallites takes place. According to our in situ conductivity measurements. the percolation threshold occurs for a crystalline volume fraction higher than 20% in both cases. Moreover, we can produce very thin (6 nm) and highly conductive (sigma(d) approximate to 0.2 S cm(-1)) n-type microcrystalline silicon films on intrinsic amorphous silicon. (C) 1997 American Institute of Physics.
引用
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页码:7282 / 7288
页数:7
相关论文
共 24 条
[1]   Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometry [J].
Akasaka, T ;
Shimizu, I .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 :883-886
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]   Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms [J].
Cabarrocas, Pere Roca i ;
Layadi, Nacer ;
Drevillon, Bernard ;
Solomon, Ionel .
Journal of Non-Crystalline Solids, 1996, 198-200 (pt 2) :871-874
[5]   New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy [J].
Cabarrocas, PRI ;
Hamma, S ;
Hadjadj, A ;
Bertomeu, J ;
Andreu, J .
APPLIED PHYSICS LETTERS, 1996, 69 (04) :529-531
[6]   SUBSTRATE SELECTIVITY IN THE FORMATION OF MICROCRYSTALLINE SILICON - MECHANISMS AND TECHNOLOGICAL CONSEQUENCES [J].
CABARROCAS, PRI ;
LAYADI, N ;
HEITZ, T ;
DREVILLON, B ;
SOLOMON, I .
APPLIED PHYSICS LETTERS, 1995, 66 (26) :3609-3611
[7]   PHASE-MODULATED ELLIPSOMETRY FROM THE ULTRAVIOLET TO THE INFRARED - IN-SITU APPLICATION TO THE GROWTH OF SEMICONDUCTORS [J].
DREVILLON, B .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1993, 27 (01) :1-87
[8]  
HAMMA S, IN PRESS THIN SOLID
[10]   OPTICAL FUNCTIONS OF CHEMICAL-VAPOR-DEPOSITED THIN-FILM SILICON DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY [J].
JELLISON, GE ;
CHISHOLM, MF ;
GORBATKIN, SM .
APPLIED PHYSICS LETTERS, 1993, 62 (25) :3348-3350