OPTICAL FUNCTIONS OF CHEMICAL-VAPOR-DEPOSITED THIN-FILM SILICON DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY

被引：240

作者：

JELLISON, GE

CHISHOLM, MF

GORBATKIN, SM

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical functions of several forms of thin-film silicon (amorphous Si, fine-grain polycrystalline Si, and large-grain polycrystalline Si) grown on oxidized Si have been determined using 2-channel spectroscopic polarization modulation ellipsometry from 240 to 840 nm (approximately 1.5-5.2 eV). It is shown that the standard technique for simulating the optical functions of polycrystalline silicon (an effective medium consisting of crystalline Si, amorphous Si, and voids) does not fit the ellipsometry data.

引用

页码：3348 / 3350

页数：3

共 18 条

[1] STUDIES OF SURFACE, THIN-FILM AND INTERFACE PROPERTIES BY AUTOMATIC SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 289 - 295
[2] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
KINSBRON, E
[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 768 - 779
[3] OPTICAL-PROPERTIES OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON OVER THE ENERGY-RANGE 3.0-EV-6.0-EV
BAGLEY, BG
ASPNES, DE
ADAMS, AC
MOGAB, CJ
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 56 - 58
[4] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances
Bruggeman, DAG
[J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664
[5] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE
COLLINS, RW
CLARK, AH
GUHA, S
HUANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4566 - 4571
[6] ELECTROREFLECTANCE AND ELLIPSOMETRY OF SILICON FROM 3 TO 6 EV
DAUNOIS, A
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1824 - 1839
[7] DREVILLON B, 1986, APPL PHYS LETT, V50, P1651
[8] OPTICAL DISPERSION-RELATIONS FOR AMORPHOUS-SEMICONDUCTORS AND AMORPHOUS DIELECTRICS
FOROUHI, AR
BLOOMER, I
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7018 - 7026
[9] Jellison G. E. Jr., 1992, Optical Materials, V1, P41, DOI 10.1016/0925-3467(92)90015-F
[10] EXAMINATION OF THIN SIO2-FILMS ON SI USING SPECTROSCOPIC POLARIZATION MODULATION ELLIPSOMETRY
JELLISON, GE
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) : 7627 - 7634

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