AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE

被引：32

作者：

COLLINS, RW ^{[1
]}

CLARK, AH ^{[1
]}

GUHA, S ^{[1
]}

HUANG, CY ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.335361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4566 / 4571

页数：6

相关论文

共 19 条

[1] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302
[2] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
KINSBRON, E
[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 768 - 779
[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[4] ASPNES DE, 1977, OPTICAL POLARIMETRY, V112, P62
[5] ASPNES DE, 1981, SPIE P, V276, P188
[6] ASPNES DE, 1975, J OPT SOC AM, V64, P812
[7] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P332
[8] OPTICAL-PROPERTIES OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON OVER THE ENERGY-RANGE 3.0-EV-6.0-EV
BAGLEY, BG
ASPNES, DE
ADAMS, AC
MOGAB, CJ
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 56 - 58
[9] BAGLEY BG, 1980, B AM PHYS SOC, V25, P12
[10] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA
DREVILLON, B
PERRIN, J
SIEFERT, JM
HUC, J
LLORET, A
DEROSNY, G
SCHMITT, JPM
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 801 - 803