ELECTROREFLECTANCE AND ELLIPSOMETRY OF SILICON FROM 3 TO 6 EV

被引：112

作者：

DAUNOIS, A ^{[1
]}

ASPNES, DE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.18.1824

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1824 / 1839

页数：16

相关论文

共 72 条

[1] Aspnes D. E., 1973, Optics Communications, V8, P222, DOI 10.1016/0030-4018(73)90132-6
[2] HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA
ASPNES, DE
ROWE, JE
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (04) : 188 - &
[3] SCHOTTKY-BARRIER ELECTROREFLECTANCE OF GE - NONDEGENERATE AND ORBITALLY DEGENERATE CRITICAL-POINTS
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2297 - 2310
[4] ELECTROREFLECTANCE OF GASB FROM 0.6 TO 26 EV
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4450 - 4458
[5] ASYMPTOTIC CONVOLUTION INTEGRAL FOR ELECTRIC FIELD EFFECTS ON INTERBAND DIELECTRIC FUNCTION
ASPNES, DE
ROWE, JE
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1145 - &
[6] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[7] HIGH PRECISION SCANNING ELLIPSOMETER
ASPNES, DE
STUDNA, AA
[J]. APPLIED OPTICS, 1975, 14 (01): : 220 - 228
[8] DIRECT VERIFICATION OF THIRD-DERIVATIVE NATURE OF ELECTROREFLECTANCE SPECTRA
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 168 - &
[9] INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (04) : 230 - 233
[10] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (14) : 913 - &

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