Molybdenum-gate HfO2CMOS FinFET technology

被引：31

作者：

Ha, DW ^{[1
]}

Takeuchi, H ^{[1
]}

Choi, YK ^{[1
]}

King, TJ ^{[1
]}

Bai, WP ^{[1
]}

Kwong, DL ^{[1
]}

Agarwal, A ^{[1
]}

Ameen, M ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS FinFETs with molybdenum gate and HfO2 gate-dielectric are reported. By tuning the gate work function via nitrogen implantation and employing a narrow fin width, low values of threshold voltage (0.28/-0.17 V) and sub-threshold swing (67.5/62.5 mV/dec) were achieved. The use of HfO2 rather than SiO2 as the gate dielectric reduces the gate leakage current density by several orders of magnitude, for EOT in the range 1.75-1.95 nm. The observed weak temperature dependence for both electron and hole mobilities ( mu(eff) similar to T-095) is ascribed to soft phonon scattering.

引用

页码：643 / 646

页数：4

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