A dedicated micromachining technology for high-aspect-ratio millimetre-wave circuits

被引：13

作者：

Saint-Etienne, E

Pons, P

Blasquez, G

Temple-Boyer, P

Conedera, V

Dilhan, M

Chauffleur, X

Menini, P

Plana, R

Parra, T

Guillon, B

Lalaurie, JC

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

[2] CNES Toulouse, F-31055 Toulouse, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 68卷 / 1-3期

关键词：

dielectric membranes; photoresist mould; micromachining; millimetre-wave passive circuits; low losses;

D O I：

10.1016/S0924-4247(98)00073-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new technological process to implement efficient millimetre-wave passive circuits on a silicon substrate. This process associates a thick positive photoresist acting as a mould for the realization of thick conductors (several microns) with an ultra-thin dielectric membrane using only two layers (SiO(2/)Si(3)N(3,8)) in order to reduce both dielectric and ohmic losses in the coplanar millimetre wave circuits. Coplanar transmission lines and a band-pass filter in the 30 GHz range, featuring respectively transmission losses lower than 0.2 and 1 dB, illustrate some potentialities of this process. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：435 / 441

页数：7

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