An STM study of the localized atomic reaction of 1,2- and 1,4-dibromoxylene with Si(111)-7x7

Thermal reactions of 1,2- and 1,4-dibromoxylene (1,2- and 1,4-diBrXy) with Si(1 1 1)-7 x 7 were investigated by STM at room temperature under UHV conditions. Reaction led to the formation of single adsorbed Br-atoms or pairs of Br-atoms, in a ratio approx. 3:1 for both reagents. Experimental results were interpreted in terms of 'parent-mediated' (halogen atom accompanied by organic residue), and 'daughter-mediated' (no accompanying organic residue) reaction dynamics. Both mechanisms contributed to the bromination of the silicon surface in comparable amounts. For pairs of bromine atoms the Br-Br separation had a most probable value of 7.6 angstrom for 1,2-diBrXy, and 11.5 angstrom for 1,4-diBrXy. This separation was in each case greater than that in the diBrXy parent molecule by a few angstroms. For parent-mediated reaction the dynamics were revealed in detail by the STM images which gave the vectorial location of the halogen-atom products (distance and angle of the daughter atoms) relative to the prior location and alignment of the adsorbed parent molecule. Both reagents, 1,2- and 1,4-diBrXy, were found to be less reactive than the corresponding dibromo-benzenes studied earlier in this laboratory [S. Dobrin et al., Surf. Sci. 561 (2004) 11], in both parent- and daughter-mediated modes. (c) 2005 Elsevier B.V. All rights reserved.