Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

被引：57

作者：

Zundel, MK ^{[1
]}

Jin-Phillipp, NY

Phillipp, F

Eberl, K

Riedl, T

Fehrenbacher, E

Hangleiter, A

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Red-light-emitting quantum dot injection lasers have been prepared by solid-source molecular beam epitaxy. The separate confinement heterostructure contains densely stacked layers of self-assembled InP quantum dots embedded in Ga0.51In0.49P waveguide and Si/Be-doped Al0.53In0.47P cladding layers. Edge-emitting laser diodes are processed, which show quantum dot lasing at 90 K. Thereby, the threshold current density is 172 A/cm(2). The energy of the laser line is at 1.757 eV, which is very close to the peak energy of subthreshold electroluminescence. (C) 1998 American Institute of Physics. [S0003-6951(98)02539-X].

引用

页码：1784 / 1786

页数：3

共 13 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319

[4] Red-emitting semiconductor quantum dot lasers [J].

Fafard, S ;

Hinzer, K ;

Raymond, S ;

Dion, M ;

McCaffrey, J ;

Feng, Y ;

Charbonneau, S .

SCIENCE, 1996, 274 (5291) :1350-1353

[5]

GUTTROFF G, 1997, JETP LETT, V66, P529

[6] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[7] Structural and optical characterization of InP/GaInP islands grown by solid-source MBE [J].

Kurtenbach, A ;

Ulrich, C ;

JinPhillipp, NY ;

Noll, F ;

Eberl, K ;

Syassen, K ;

Phillipp, F .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) :395-400

[8]

KURTENBACH A, 1995, NATO ASI SERIES

[9] Optical gain and lasing in self-assembled InP/GaInP quantum dots [J].

Moritz, A ;

Wirth, R ;

Hangleiter, A ;

Kurtenbach, A ;

Eberl, K .

APPLIED PHYSICS LETTERS, 1996, 69 (02) :212-214

[10] Radiative lifetime of resonantly excited excitons in quantum dots. [J].

Ruhle, WW ;

Kurtenbach, A ;

Eberl, K .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12) :1305-1313

← 1 2 →