Structural and optical characterization of InP/GaInP islands grown by solid-source MBE

被引：18

作者：

Kurtenbach, A ^{[1
]}

Ulrich, C ^{[1
]}

JinPhillipp, NY ^{[1
]}

Noll, F ^{[1
]}

Eberl, K ^{[1
]}

Syassen, K ^{[1
]}

Phillipp, F ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,D-70569 STUTTGART,GERMANY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

atomic force microscopy (AFM); InP/GaInP; photoluminescence (PL); photoreflectance (PR); quantum dots; reflection high energy electron diffraction (RHEED); self-assembled dots; solid-source molecular beam epitaxy (MBE); transmission electron microscopy (TEM);

D O I：

10.1007/BF02666609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the growth of InP/GaInP islands on GaAs substrates by solid-source molecular beam epitaxy. It is shown by reflection high energy electron diffraction and atomic force microscopy that a rapid change from a two-dimensional to a three-dimensional growth mode occurs at about nominally 1.5 monolayers (MLs) InP. Transmission electron microscopy measurements demonstrate the coherent incorporation of InP islands in an GaInP matrix for nominally 2.5 MLs InP. The energy of the InP photoluminescence (PL) shifts to lower energies (100 meV) when the growth interruption time between the island and cap layer growth is increased from 1 to 300 s in case of nominally 3 MLs InP. Simultaneously, an increase of the PL linewidth is observed from 30 to 60 meV. Room temperature photoreflectance measurements on samples with various InP thickness have been performed. Compared to PL measurements, an additional feature in the photoreflectance spectra is observed for samples with more than 7 MLs InP, which is attributed to a transition between excited electron and hole states of the islands.

引用

页码：395 / 400

页数：6

共 23 条

[1] NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].