Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers

被引:33
作者
Zhou, WD [1 ]
Qasaimeh, O [1 ]
Phillips, J [1 ]
Krishna, S [1 ]
Bhattacharya, P [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
关键词
D O I
10.1063/1.123366
中图分类号
O59 [应用物理学];
学科分类号
摘要
Efficient wavelength switching is demonstrated in an In0.4Ga0.6As/GaAs self-organized quantum dot laser with an intracavity absorber section. A wavelength shift of similar to 15 nm, believed to be caused by a shift of lasing between the bound states of the quantum dot, is obtained for a bias change of 6 V. (C) 1999 American Institute of Physics. [S0003-6951(99)03706-7].
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收藏
页码:783 / 785
页数:3
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