Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers
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Zhou, WD
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Zhou, WD
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Qasaimeh, O
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Qasaimeh, O
[1
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Phillips, J
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Phillips, J
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Krishna, S
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Krishna, S
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Bhattacharya, P
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Bhattacharya, P
[1
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[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Efficient wavelength switching is demonstrated in an In0.4Ga0.6As/GaAs self-organized quantum dot laser with an intracavity absorber section. A wavelength shift of similar to 15 nm, believed to be caused by a shift of lasing between the bound states of the quantum dot, is obtained for a bias change of 6 V. (C) 1999 American Institute of Physics. [S0003-6951(99)03706-7].