Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: Origin and means of control

被引：42

作者：

O'Reilly, EP ^{[1
]}

Onischenko, AI

Avrutin, EA

Bhattacharyya, D

Marsh, JH

机构：

[1] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England

[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 21期

关键词：

D O I：

10.1049/el:19981397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is proposed that the recently observed quasi-periodic modulation of the emission spectra of quantum dot lasers is due to interference effects associated with waveguide leakage into the substrate. Such effects could be positively engineered to control laser spectra in such devices.

引用

页码：2035 / 2037

页数：3

共 7 条

[1]

Arzhanov E. V., 1994, Quantum Electronics, V24, P581, DOI 10.1070/QE1994v024n07ABEH000144

[2]

BHATTACHARYYA D, 1998, SIOE 98 C CARD UK AP

[3]

GORDEEV NY, 1997, P 5 INT S NAN PHYS T, P183

[4]

HARRIS L, 1997, CMMP 97 C EX UK DEC

[5] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

[6]

LEOPARD D, 1993, APPL PHYS LETT, V63, P3203

[7] STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE [J].

TEMMYO, J ;

KURAMOCHI, E ;

SUGO, M ;

NISHIYA, T ;

NOTZEL, R ;

TAMAMURA, T .

ELECTRONICS LETTERS, 1995, 31 (03) :209-211

← 1 →