Hydrogen in a-Si:H deposited by an expanding thermal plasma:: A temperature, growth rate and isotope study

被引：24

作者：

Kessels, WMM ^{[1
]}

Van de Sanden, MCM ^{[1
]}

Severens, RJ ^{[1
]}

Van Ijzendoorn, LJ ^{[1
]}

Schram, DC ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

引用

页码：529 / 534

页数：6

共 13 条

[1]

ADRIAENSSENS GJ, COMMUNICATION

[2] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].

BEEMAN, D ;

TSU, R ;

THORPE, MF .

PHYSICAL REVIEW B, 1985, 32 (02) :874-878

[3] ELASTIC RECOIL DETECTION [J].

BIK, WMA ;

HABRAKEN, FHPM .

REPORTS ON PROGRESS IN PHYSICS, 1993, 56 (07) :859-902

[4]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[5] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].

FANG, CJ ;

GRUNTZ, KJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

MULLER, G ;

KALBITZER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260

[6]

KESSELS WMM, IN PRESS J NONCRYST

[7] Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution [J].

Kroll, U ;

Meier, J ;

Shah, A ;

Mikhailov, S ;

Weber, J .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :4971-4975

[8] INFRARED-ABSORPTION STRENGTH AND HYDROGEN CONTENT OF HYDROGENATED AMORPHOUS-SILICON [J].

LANGFORD, AA ;

FLEET, ML ;

NELSON, BP ;

LANFORD, WA ;

MALEY, N .

PHYSICAL REVIEW B, 1992, 45 (23) :13367-13377

[9] CHARACTERIZATION OF PLASMA BEAM DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

SEVERENS, RJ ;

BRUSSAARD, GJH ;

VANDESANDEN, MCM ;

SCHRAM, DC .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :491-493

[10] Tritium in amorphous silicon [J].

Sidhu, LS ;

Kosteski, T ;

OLeary, SK ;

Gaspari, F ;

Zukotynski, S ;

Kherani, NP ;

Shmadya, W .

AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :509-514

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