Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films

被引：51

作者：

Cantu, P ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 21期

关键词：

D O I：

10.1063/1.1577410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conductive Al0.65Ga0.35N films were fabricated using indium-silicon codoping and a low growth temperature of 920 degreesC in the metalorganic chemical vapor deposition process. The Al0.65Ga0.35N:(Si, In) layers exhibited an n-type carrier density as high as 2.5x10(19) cm(-3) with an electron mobility of 22 cm(2)/V s, corresponding to a resistivity of 1.1x10(-4) Omega cm. Significantly higher resistivity values were measured for AlxGa1-xN: Si doped films with xgreater than or equal to0.49 deposited at 1150degreesC without indium, e.g., the Al0.62Ga0.38N: Si samples exhibited a maximum carrier concentration of 1.3x10(17) cm(-3) and a resistivity of 6.2x10(-2) Omega cm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films. (C) 2003 American Institute of Physics.

引用

页码：3683 / 3685

页数：3

共 15 条

[1] Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors [J].

Adivarahan, V ;

Simin, G ;

Tamulaitis, G ;

Srinivasan, R ;

Yang, J ;

Khan, MA ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1903-1905

[2] Doping properties of C, Si, and Ge impurities in GaN and AlN [J].

Boguslawski, P ;

Bernholc, J .

PHYSICAL REVIEW B, 1997, 56 (15) :9496-9505

[3]

FISHER S, 1995, APPL PHYS LETT, V67, P1298

[4] Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer [J].

Iwaya, M ;

Terao, S ;

Hayashi, N ;

Kashima, T ;

Amano, H ;

Akasaki, I .

APPLIED SURFACE SCIENCE, 2000, 159 :405-413

[5]

Keller S, 2001, PHYS STATUS SOLIDI A, V188, P775, DOI 10.1002/1521-396X(200112)188:2<775::AID-PSSA775>3.0.CO

[6]

2-S

[7] Metastability of oxygen donors in AlGaN [J].

McCluskey, MD ;

Johnson, NM ;

Van de Walle, CG ;

Bour, DP ;

Kneissl, M ;

Walukiewicz, W .

PHYSICAL REVIEW LETTERS, 1998, 80 (18) :4008-4011

[8] The role of dislocation scattering in n-type GaN films [J].

Ng, HM ;

Doppalapudi, D ;

Moustakas, TD ;

Weimann, NG ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :821-823

[9] SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1-xN [J].

Parish, G ;

Keller, S ;

Denbaars, SP ;

Mishra, UK .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) :15-20

[10] ELECTRON MOBILITY IN PLASTICALLY DEFORMED GERMANIUM [J].

PODOR, B .

PHYSICA STATUS SOLIDI, 1966, 16 (02) :K167-&

← 1 2 →