Polycrystalline diamond pressure microsensor

被引:39
作者
Davidson, JL
Wur, DR
Kang, WP
Kinser, DL
Kerns, DV
机构
[1] Dept. of Appl. and Eng. Sciences, Vanderbilt Univ. Sch. of Engineering, Engineering Building - 226, Nashville, TN 37235
关键词
diamond; sensors; microelectronic; microelectromechanical;
D O I
10.1016/0925-9635(96)80010-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond deposition processing and silicon photolithographic and etching techniques were used to create undoped diamond diaphragms a few millimetres in diameter and 5-10 microns thick. Delineated and electrically isolated dopsd diamond resistors nominally 100 microns wide by 500 microns long by 4 microns thick, with thick film silver-based interconnect are fabricated on top of the diaphragm. Zero strain values of the resistors are nominally a few hundred k Omega. Isolation ratio is greater than 10(3). As the membrane is flexed by pressure, the Delta R/R piezoresistance (PZR) of the diamond resistors was measured. Various PZR configurations and temperature behaviour were examined.
引用
收藏
页码:86 / 92
页数:7
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