POLYCRYSTALLINE SILICON STRAIN SENSORS

[1] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[2] FRENCH PH, 1984, ELECTRON LETT, V24, P999

[3] LOW-COST PRESSURE FORCE TRANSDUCER WITH SILICON THIN-FILM STRAIN-GAUGES [J]. SENSORS AND ACTUATORS, 1983, 4 (02): : 183 - 189

[4] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 64 - 70

[5] STRESS EFFECT OF AG-N-TYPE SI SCHOTTKY-BARRIER DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 993 - 995

[6] MANDURAH MM, 1981, THESIS STANFORD U

[7] NISHIDON S, 1983, THIN SOLID FILMS, V112

[8] PIEZORESISTIVE PROPERTIES OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4780 - 4783

[9] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49

[10] WARTMAN JJ, 1965, J APPL PHYS, V36, P153

[1] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &

[2] FRENCH PH, 1984, ELECTRON LETT, V24, P999

[3] LOW-COST PRESSURE FORCE TRANSDUCER WITH SILICON THIN-FILM STRAIN-GAUGES [J]. SENSORS AND ACTUATORS, 1983, 4 (02): : 183 - 189

[4] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 64 - 70

[5] STRESS EFFECT OF AG-N-TYPE SI SCHOTTKY-BARRIER DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 993 - 995

[6] MANDURAH MM, 1981, THESIS STANFORD U

[7] NISHIDON S, 1983, THIN SOLID FILMS, V112

[8] PIEZORESISTIVE PROPERTIES OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4780 - 4783

[9] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49

[10] WARTMAN JJ, 1965, J APPL PHYS, V36, P153