STRESS EFFECT OF AG-N-TYPE SI SCHOTTKY-BARRIER DIODE

The uniaxial stress effect on Ag-n-type Si Schottky-barrier diodes was examined. The simple barrier height variation could not explain the observed results of the current increment in both forward and reverse J- V characteristics (particularly the absence of saturation current in the reverse-biased region) and the constant barrier height obtained from C- V measurement under pressure. It was found that application of pressure effectively diminishes the potential barrier height, affecting only the electrons contributing to current transport. Its effect can be expressed by introduction of the stress-sensitive length xs. Experimental results show that xs is proportional to the applied pressure. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.