BEHAVIOR OF SCHOTTKY-BARRIER DIODE UNDER UNIAXIAL STRESS

被引：4

作者：

CHINO, KI ^{[1
]}

MIZUSHIM.Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL,MUSASHINO ELECT COMM LAB,MUSASHINO 180,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 01期

关键词：

D O I：

10.1143/JJAP.13.156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 163

页数：8

共 16 条

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[2] EFFECT OF SURFACE POLISHING ON STRESS-SENSITIVITY OF A SCHOTTKY-BARRIER DIODE [J].

CHINO, K ;

ARIYOSHI, H .

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[3]

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[4]

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[5] INDUCED STRESS-SENSITIVITY OF ION-BOMBARDED SILICON-METAL CONTACTS [J].

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ARIYOSHI, H ;

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[6] STRESS EFFECT OF GOLD-DOPED AND GAMMA-IRRADIATED SCHOTTKY-BARRIER DIODES [J].

CHINO, KI ;

OKAMOTO, H ;

ARIYOSHI, H ;

MIZUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (04) :502-+

[7]

KIHUCHI M, 1969, SOLID STATE COMMUN, V7, P1199

[8] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].

LEDERHANDLER, SR ;

GIACOLETTO, LJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04) :477-483

[9] OBSERVATION ON STRESS EFFECT IN SCHOTTKY BARRIER DIODES [J].

OKAMOTO, H ;

ARIYOSHI, H ;

MIZUSHIMA, Y .

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[10]

ONO K, 1961, ELECTR COMM LAB TECH, V10, P1741

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