PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH8

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[4] SOME EFFECTS OF LOCALIZED STRESS ON SILICON PLANAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (06) : 286 - +

[5] MEASUREMENT OF NONLINEAR POLARIZATION OF KTAO3 USING SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2925 - &

[6] EFFECT OF GENERATION-RECOMBINATION CENTERS ON STRESS-DEPENDENCE OF SI P-N JUNCTION CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 213 - &

[7] MURPHY G, 1946, ADVANCED MECHANICS M, P32

[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[9] PREECE KE, 1965, IEEE P, V53, P618

[10] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1958 - &

[1] BETHE HA, 1942, MIT4312 RAD LAB REP

[2] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH8

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[4] SOME EFFECTS OF LOCALIZED STRESS ON SILICON PLANAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (06) : 286 - +

[5] MEASUREMENT OF NONLINEAR POLARIZATION OF KTAO3 USING SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2925 - &

[6] EFFECT OF GENERATION-RECOMBINATION CENTERS ON STRESS-DEPENDENCE OF SI P-N JUNCTION CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 213 - &

[7] MURPHY G, 1946, ADVANCED MECHANICS M, P32

[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &

[9] PREECE KE, 1965, IEEE P, V53, P618

[10] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1958 - &