STM observation of wurtzite GaN(0001) surface grown by MBE on 6H-SiC substrates

被引：9

作者：

Nakada, Y

Okumura, H

机构：

[1] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan

[2] JRCAT, Natl Inst Adv Interdisciplanary Res, Tsukuba, Ibaraki 305, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; 6H-SiC substrates; STM observation; MBE;

D O I：

10.1016/S0022-0248(98)00314-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Surface structure of molecular beam epitaxy (MBE)-grown wurtzite GaN epilayers on 6H-SiC substrates was investigated by scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED), Many columnar crystals were found to grow on 6H-SiC substrates and surfaces of the columnar crystals were found to be covered with several nanometer scale particle-like structures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：370 / 374

页数：5

共 4 条

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