Molecular memories that survive silicon device processing and real-world operation

被引:495
作者
Liu, ZM
Yasseri, AA
Lindsey, JS
Bocian, DF [1 ]
机构
[1] Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA
[2] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA
关键词
D O I
10.1126/science.1090677
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
If molecular components are to be used as functional elements in place of the semiconductor-based devices present in conventional microcircuitry, they must compete with semiconductors under the extreme conditions required for processing and operating a practical device. Herein, we demonstrate that porphyrin-based molecules bound to Si( 100), which exhibit redox behavior useful for information storage, can meet this challenge. These molecular media in an inert atmosphere are stable under extremes of temperature ( 400 degreesC) for extended periods ( approaching 1 hour) and do not degrade under large numbers of read-write cycles (10(12)).
引用
收藏
页码:1543 / 1545
页数:3
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