Oscillatory spin-filtering due to gate control of spin-dependent interface conductance

被引：72

作者：

Grundler, D

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.86.1058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the Landauer-Buttiker formalism, we study ballistic transport properties of an interface between a ferromagnetic metal and a mesoscopic two-dimensional electron system in a III-V semiconductor. We show that in a Sharvin point contact spin-filtering occurs due to band structure mismatch. Theory predicts a pronounced effect for Fe on InAs which can be controlled via a gate electrode.

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页码：1058 / 1061

页数：4

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