Theory of spin-dependent transport in ferromagnet-semiconductor heterostructures

被引：73

作者：

Johnson, M ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.58.9635

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formalism of spin-dependent transport is used to calculate the conductance of device structures comprised of a two-dimensional electron-gas (2DEG) channel and ferromagnetic source and/or drain for a variety of magnetization configurations. Among the effects predicted by the calculations is spin-dependent current rectification at a 2DEG-ferromagnet interface. [S0163-1829(98)02036-0].

引用

页码：9635 / 9638

页数：4

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