Composition and porosity of multicomponent structures: porous silicon as a three-component system

被引：14

作者：

Belyakov, LV ^{[1
]}

Makarova, TL ^{[1
]}

Sakharov, VI ^{[1
]}

Serenkov, IT ^{[1
]}

Sreseli, OM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187534

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown for the system porous silicon (por-Si)-silicon that effective nondestructive investigation of the interfacial morphology of layered semiconductor systems and of the composition of multicomponent layers by ellipsometry and Rutherford backscattering is possible. Both methods were used to determine the percentage composition of the main components of por-Si:crystal silicon, silicon oxide, and voids (porosity). It is shown that por-Si obtained by pulse-anodization contains a substantial quantity of silicon oxide. It is also shown that spectral ellipsometry can be used to determine the specific ratio of individual layers or components of multilayer and multicomponent systems (provided that the spectral dispersion of the optical constants of these components is known). (C) 1998 American Institute of Physics. [S1063-7826(98)02209-1].

引用

页码：1003 / 1005

页数：3

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