Scanning room-temperature photoluminescence in polycrystalline silicon

被引：42

作者：

Koshka, Y ^{[1
]}

Ostapenko, S

Tarasov, I

McHugo, S

Kalejs, JP

机构：

[1] Univ S Florida, Ctr Microelect Res, Tampa, FL 33620 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[3] ASE Amer Inc, Billerica, MA 01821 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) mapping was performed on polycrystalline silicon wafers at room temperature. Two PL bands are observed: (1) a band-to-band emission with a maximum at 1.09 eV, and (2) a deep "defect'' luminescence at about 0.8 eV. PL mapping of 10 cm x 10 cm wafers revealed inhomogeneity of the band-to-band PL intensity which could be correlated to the distribution of minority carrier diffusion length in the wafer bulk. We have also observed that the intensity of the 0.8 eV band is strongest along those grain boundaries where the band-to-band PL is suppressed as well as minority carrier diffusion length. The origin of the 0.8 eV luminescence band is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)00611-7].

引用

页码：1555 / 1557

页数：3

共 11 条

[1]

BAILEY J, 1995, 1 WORLD C PHOT EN CO, P1356

[2]

Katz E, 1996, DIFFUS DE B, V51-5, P479

[3]

KAZMERSKI LL, 1987, MRS P, V106, P199

[4] IMPURITY-RELATED PHOTOLUMINESCENCE FROM SILICON AT ROOM-TEMPERATURE [J].

KING, O ;

HALL, DG .

PHYSICAL REVIEW B, 1994, 50 (15) :10661-10665

[5]

KOSHKA Y, 1997, 26 IEEE PHOT SPEC C, P115

[6] Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon [J].

McHugo, SA ;

Thompson, AC ;

Perichaud, I ;

Martinuzzi, S .

APPLIED PHYSICS LETTERS, 1998, 72 (26) :3482-3484

[7] GETTERING AND HYDROGEN PASSIVATION OF EDGE-DEFINED FILM-FED GROWN MULTICRYSTALLINE SILICON SOLAR-CELLS BY AL DIFFUSION AND FORMING GAS ANNEAL [J].

SANA, P ;

ROHATGI, A ;

KALEJS, JP ;

BELL, RO .

APPLIED PHYSICS LETTERS, 1994, 64 (01) :97-99

[8] DISLOCATION-RELATED PHOTOLUMINESCENCE IN SILICON [J].

SAUER, R ;

WEBER, J ;

STOLZ, J ;

WEBER, ER ;

KUSTERS, KH ;

ALEXANDER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01) :1-13

[9]

SAWYER WD, 1992, MATER SCI FORUM, V83, P291

[10] Photoluminescence due to oxygen precipitates distinguished from the D lines in annealed Si [J].

Tajima, M ;

Tokita, M ;

Warashina, M .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :1749-1753

← 1 2 →