IMPURITY-RELATED PHOTOLUMINESCENCE FROM SILICON AT ROOM-TEMPERATURE

被引：26

作者：

KING, O

HALL, DG

机构：

[1] Institute of Optics, University of Rochester, Rochester

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.10661

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results for photoluminescence studies of an impurity-related defect system in 450 degrees C annealed Czochralski-grown silicon resulting in optical emission with a wavelength near 1.7 mu m. The photoluminescence emission is found to have a significant intensity that persists to room temperature. The external quantum efficiency at 300 K is measured to be approximately 2.5X10(-5).

引用

收藏

页码：10661 / 10665

页数：5

相关论文

共 22 条

[1] RADIATIVE DECAY OF EXCITONS BOUND TO CHALCOGEN-RELATED ISOELECTRONIC IMPURITY COMPLEXES IN SILICON [J].

BRADFIELD, PL ;

BROWN, TG ;

HALL, DG .

PHYSICAL REVIEW B, 1988, 38 (05) :3533-3536

[2] ELECTROLUMINESCENCE FROM SULFUR IMPURITIES IN A P-N-JUNCTION FORMED IN EPITAXIAL SILICON [J].

BRADFIELD, PL ;

BROWN, TG ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1989, 55 (02) :100-102

[3] OPTICAL-EMISSION FROM IMPURITIES WITHIN AN EPITAXIAL-SILICON OPTICAL WAVE-GUIDE [J].

BROWN, TG ;

BRADFIELD, PL ;

HALL, DG ;

SOREF, RA .

OPTICS LETTERS, 1987, 12 (09) :753-755

[4] CONCENTRATION-DEPENDENCE OF OPTICAL-EMISSION FROM SULFUR-DOPED CRYSTALLINE SILICON [J].

BROWN, TG ;

BRADFIELD, PL ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1585-1587

[5] OPTICAL-EMISSION AT 1.32-MU-M FROM SULFUR-DOPED CRYSTALLINE SILICON [J].

BROWN, TG ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :245-247

[6]

BROWN TG, 1987, THESIS U ROCHESTER

[7] 1.3-MU-M LIGHT-EMITTING DIODE FROM SILICON ELECTRON-IRRADIATED AT ITS DAMAGE THRESHOLD [J].

CANHAM, LT ;

BARRACLOUGH, KG ;

ROBBINS, DJ .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1509-1511

[8]

DAVIES G, 1989, PHYS REP, V176, P84

[9]

DEAN PJ, 1992, DEEP CTR SEMICONDUCT, P215

[10]

Dornen A., 1985, Thirteenth International Conference on Defects in Semiconductors, P653