ELECTROLUMINESCENCE FROM SULFUR IMPURITIES IN A P-N-JUNCTION FORMED IN EPITAXIAL SILICON

被引：31

作者：

BRADFIELD, PL

BROWN, TG

HALL, DG

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：100 / 102

页数：3

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