Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering

被引：33

作者：

Lii, DF ^{[1
]}

Huang, JL

Jen, IJ

Lin, SS

Sajgalik, P

机构：

[1] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[3] Slovak Acad Sci, Inst Inorgan Chem, SK-84236 Bratislava, Slovakia

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 192卷 / 01期

关键词：

ITO film; annealing; resistivity; optical transmission;

D O I：

10.1016/j.surfcoat.2004.03.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ITO films were deposited by ion beam sputtering, and was favorable to have the (100) texture with the increase of annealing time. The oxygen content decreased with the increase of annealing time, corresponding to the increase of oxygen vacancies. The electrical conductivity was primarily due to the contribution of oxygen vacancies. The resistivity decreased to a minimum of 1.77 x 10(-4) Omega cm at 450 V after annealing at 500 degreesC for 60 min, but increased with the further increase of ion beam voltage. The carrier concentration and mobility both increased due to annealing. The optical transmission in the visible region of ITO films increased after annealing, but only slightly increased with the increase of ion beam voltage. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：106 / 111

页数：6

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