Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation

被引：150

作者：

Laux, S

Kaiser, N

Zöller, A

Götzelmann, R

Lauth, H

Bernitzki, H

机构：

[1] Fraunhofer Inst Angew Opt & Feinmechanik, D-07745 Jena, Germany

[2] Leybold Syst GmbH, D-63450 Hanau, Germany

[3] JENOPTIK Laser Opt Syst GmbH, D-07745 Jena, Germany

来源：

THIN SOLID FILMS | 1998年 / 335卷 / 1-2期

关键词：

indium tin oxide (ITO); transparent semiconductors; ion-assisted deposition;

D O I：

10.1016/S0040-6090(98)00861-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of indium tin oxide (ITO) thin films deposited by plasma ion-assisted evaporation are reported. With deposition at room temperature using certain ion-source parameters ITO films with an electrical resistivity of 5 x 10(-6) Omega m and an absorptance at 550 nm of less than 5% for 300 nm film thickness were obtained. Variation of oxygen pressure during deposition results in different band gap energies and different resistivities. The complex index of refraction was determined using a dispersion model suitable for explaining the particular properties of ITO in the visible and near infrared spectral range. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：1 / 5

页数：5

共 13 条

[1]

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