Structural and noise characterization of VO2 films on SiO2/Si substrates

被引：5

作者：

Baidakova, MV ^{[1
]}

Bobyl, AV ^{[1
]}

Malyarov, VG ^{[1
]}

Tret'yakov, VV ^{[1
]}

Khrebtov, IA ^{[1
]}

Shaganov, II ^{[1
]}

机构：

[1] St Petersburg State Univ, St Petersburg 199034, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 07期

关键词：

D O I：

10.1134/1.1261815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multi-technique structural and electrophysical investigations of VO2 films on SiO2/Si substrates are carried out to study the microscopic nature of fluctuator defects - sources of low-frequency flicker noise. It is established that the noise intensity is determined by the magnitude of the microstress fluctuations [epsilon] = {[(delta c/c)(2)]}, where c is the lattice parameter along the c-axis parallel to [011] direction in the blocks of which the him is formed. The dimensions of the blocks were determined in the direction of the c-axis (t(c) similar to 1000 Angstrom. The suggestion is put forward that the samples contain two types of fluctuator defects: 1) V atoms jumping between the two nearest interstitial sites and 2) V atoms jumping between these interstitial sites near lattice defects. (C) 1997 American Institute of Physics. [S1063-7850(97)01107-5].

引用

页码：520 / 522

页数：3

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