RELATIONSHIP BETWEEN TRANSITION-TEMPERATURE AND X IN V1-XWXO2 FILMS DEPOSITED BY DUAL-TARGET MAGNETRON SPUTTERING

被引:102
作者
JIN, P
TANEMURA, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期
关键词
VO2; V1-XWXO2; PHASE TRANSITION; THIN FILMS; DUAL-TARGET SPUTTERING; ADVANCED WINDOW COATINGS;
D O I
10.1143/JJAP.34.2459
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of V1-2WxO2 were deposited on glass and Si by dual-target sputtering and characterized by thin film X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and spectrophotometry. The relationship between x (0-0.026) and the phase transition temperature tau(c) (0-67 degrees C) in the most applicable range for advanced window coatings was clarified by formation of a single-phase film and precise determination of the amount of doping. Tungsten doping linearly decreases tau(c) by 23 degrees C/at.% W and also significantly reduces the thermal hysteresis loop width in optical transmittance.
引用
收藏
页码:2459 / 2460
页数:2
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