Piezoresistance of carbon nanotubes on deformable thin-film membranes

被引：193

作者：

Grow, RJ ^{[1
]}

Wang, Q ^{[1
]}

Cao, J ^{[1
]}

Wang, DW ^{[1
]}

Dai, HJ ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1872221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nanotubes have interesting electromechanical properties that may enable a new class of nanoscale mechanical sensors. We fabricated two-terminal nanotube devices on silicon nitride membranes, measured their electronic transport versus strain, and estimated their band gaps and the strain-induced changes in them. We found band-gap increases and decreases among both semiconducting and small-gap semiconducting (SGS) tubes. The SGS band gaps exceeded the predicted curvature-induced gaps for their diameter. Some of the band-gap changes for both types of tubes exceeded the predicted maxima. These anomalies are likely caused by interaction with the rough silicon nitride surface. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 28 条

[1] Electromechanical properties of metallic, quasimetallic, and semiconducting carbon nanotubes under stretching [J].