Monolithically integrated micromachined RF MEMS capacitive switches

被引：106

作者：

Park, JY ^{[1
]}

Kim, GH ^{[1
]}

Chung, KW ^{[1
]}

Bu, JU ^{[1
]}

机构：

[1] LG Elect Inst Technol, Mat & Devices Lab, Seocho Gu, Seoul 137724, South Korea

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 89卷 / 1-2期

关键词：

RF MEMS switches; integrated; micromachined; capacitive; strontium titanate oxide; electrostatic; electroplating; insertion loss; isolation; on/off ratio;

D O I：

10.1016/S0924-4247(00)00549-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF MEMS switches are newly designed and fabricated with various structural geometry of transmission line, hinge, and movable plate formed by using electroplating techniques, low temperature processes, and dry releasing techniques. In particular, strontium titanate oxide (SrTiO3) with high dielectric constant is investigated for high switching on/off ratio and on capacitance as a dielectric layer of a micromechanical capacitive switch. Achieved lowest actuation voltage of the fabricated switches is 8 V. The fabricated switch has low insertion loss of 0.08 dB at 10 GHz, isolation of 42 dB at 5 GHz. on/off ratio of 600, and on capacitance of 50 pF, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：88 / 94

页数：7

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