Ab initio study of intrinsic point defects and dopant-defect complexes in SiC: Application to boron diffusion

被引：26

作者：

Bockstedte, M ^{[1
]}

Pankratov, O ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Theor Festkorperphys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

ab initio defect-energetics; boron; defect complexes; diffusion; point defects;

D O I：

10.4028/www.scientific.net/MSF.338-342.949

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We apply an ab initio method to study intrinsic interstitials, vacancy-antisite complexes, boron interstitials and boron-vacancy complexes in SiC. The electronic and atomic structure as well as the energetics of the defects is calculated. The stability of substitutional boron and aspects of the migration of impurities are discussed.

引用

页码：949 / 952

页数：4

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