Suppressed diffusion of implanted boron in 4H-SiC

被引：53

作者：

Laube, M ^{[1
]}

Pensl, G

Itoh, H

机构：

[1] Univ Erlangen Nurnberg, Inst Phys Appl, D-91058 Erlangen, Germany

[2] Japan Atom Energy Res Inst, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient-enhanced diffusion of boron (B) during anneals at 1700 degrees C is experimentally observed in B-implanted 4H-SiC samples. This enhanced diffusion can strongly be suppressed by coimplantation of carbon or by a preanneal at 900 degrees C. It is proposed that B in 4H-SiC diffuses via the kick-out mechanism with the assistance of silicon interstitials in analogy to the B diffusion in Si. From the Fickian diffusion tail into the undamaged bulk, the preexponential factor D-0 and the activation energy E-A of the B diffusion coefficient D(B,T) are determined. (C) 1999 American Institute of Physics. [S0003-6951(99)01116-X].

引用

页码：2292 / 2294

页数：3

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