PHOTOLUMINESCENCE OF RADIATION-INDUCED DEFECTS IN 3C-SIC EPITAXIALLY GROWN ON SI

被引：63

作者：

ITOH, H ^{[1
]}

YOSHIKAWA, M ^{[1
]}

NASHIYAMA, I ^{[1
]}

OKUMURA, H ^{[1
]}

MISAWA, S ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.359008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) has been used to study defects introduced by 1-MeV-electron irradiation in cubic silicon carbide (3C-SiC) films epitaxially grown on Si substrates by means of chemical vapor deposition. A dominant PL line of 1.913 eV observed in 3C-SiC irradiated with electrons was found to disappear at annealing stages of ≊100 and 700°C. The annealing stages of the 1.913 eV PL center and its fraction annealed at each annealing stage were in good agreement with those obtained for the T1 electron spin resonance center, which is attributed to isolated vacancies at silicon sublattice sites [H. Itoh, M. Yoshikawa, I. Nashiyama, S. Misawa, H. Okumura, and S. Yoshida, IEEE Trans. Nucl. Sci. NS-37, 1732 (1990)]. This result indicates that the 1.913 eV PL line arises from silicon vacancies in 3C-SiC. The characteristics of other PL lines induced in 3C-SiC epilayers by irradiation are also discussed. © 1995 American Institute of Physics.

引用

页码：837 / 842

页数：6

共 24 条

[1] Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58
[2] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN CUBIC SIC - LOCALIZED MODES AND JAHN-TELLER EFFECT
CHOYKE, WJ
PATRICK, L
[J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1843 - &
[3] LOW-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF CHEMICAL-VAPOR-DEPOSITION-GROWN 3C-SIC ON SI
CHOYKE, WJ
FENG, ZC
POWELL, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3163 - 3175
[4] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
FREITAS, JA
BISHOP, SG
EDMOND, JA
RYU, J
DAVIS, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2011 - 2016
[5] GEICZY II, 1971, RAD EFFECTS SEMICOND, P327
[6] GEITSI II, 1970, SOV PHYS SEMICOND+, V4, P744
[7] ELECTRON-SPIN RESONANCE IN ELECTRON-IRRADIATED 3C-SIC
ITOH, H
HAYAKAWA, N
NASHIYAMA, I
SAKUMA, E
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4529 - 4531
[8] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN CVD-GROWN 3C-SIC IRRADIATED WITH 2MEV PROTONS
ITOH, H
YOSHIKAWA, M
NASHIYAMA, I
MISAWA, S
OKUMURA, H
YOSHIDA, S
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (07) : 707 - 710
[9] RADIATION-INDUCED DEFECTS IN CVD-GROWN 3C-SIC
ITOH, H
YOSHIKAWA, M
NASHIYAMA, I
MISAWA, S
OKUMURA, H
YOSHIDA, S
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1732 - 1738
[10] ITOH H, 1992, MATER RES SOC SYMP P, V262, P331, DOI 10.1557/PROC-262-331

← 1 2 3 →