Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices

An analytic model of the direct tunneling current in metal-oxide-semiconductor devices as a function of oxide field is presented. Accurate modeling of the low-field roll-off in the current results from proper modeling of the field dependencies of the sheet charge, electron impact frequency on the interface, and tunneling probability. To obtain the latter dependence, a modified WKB approximation is used. (C) 1999 American Institute of Physics. [S0003-6951(99)02303-7].