Influence of copper crystal surface on the CVD growth of large area monolayer graphene

被引：191

作者：

Zhao, L. ^{[1
]}

Rim, K. T. ^{[2
]}

Zhou, H. ^{[1
]}

He, R. ^{[1
]}

Heinz, T. F. ^{[1
,2
]}

Pinczuk, A. ^{[1
,3
]}

Flynn, G. W. ^{[4
]}

Pasupathy, A. N. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[3] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[4] Columbia Univ, Dept Chem, New York, NY 10027 USA

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 07期

关键词：

STM; Graphene; EPITAXIAL GRAPHENE;

D O I：

10.1016/j.ssc.2011.01.014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the influence of the surface structure of copper single crystals on the growth of large area monolayer graphene by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we find that graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). The graphene has a hexagonal superstructure on Cu(111) with a significant electronic component,whereas it has a linear superstructure on Cu(100). Graphene on Cu(111) forms a microscopically uniform sheet, the quality of which is determined by the presence of grain boundaries where graphene grains with different orientations meet. Graphene grown on Cu(100) under similar conditions does not form a uniform sheet and instead displays exposed nanoscale edges. Our results indicate the importance of the copper crystal structure on the microstructure of graphene films produced by CVD. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：509 / 513

页数：5

共 24 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2]

Balog R, 2010, NAT MATER, V9, P315, DOI [10.1038/nmat2710, 10.1038/NMAT2710]

[3] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].